Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (12) , 2505-2513
- https://doi.org/10.1109/16.735728
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- The effect of statistical dopant fluctuations on MOS device performancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 0.05 μm-CMOS with ultra shallow source/drain junctions fabricated by 5 keV ion implantation and rapid thermal annealingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Matching analysis of deposition defined 50-nm MOSFET'sIEEE Transactions on Electron Devices, 1998
- CMOS scaling into the nanometer regimeProceedings of the IEEE, 1997
- A 40 nm gate length n-MOSFETIEEE Transactions on Electron Devices, 1995
- Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET'sIEEE Transactions on Electron Devices, 1994
- Influence of statistical dopant fluctuations on MOS transistors with deep submicron channel lengthsMicroelectronic Engineering, 1993
- Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltageIEEE Transactions on Electron Devices, 1992
- Physical limits in digital electronicsProceedings of the IEEE, 1975