Strategies For Direct Monolithic Integration of AlxGa(1−x)As/InxGa(1−x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1−x) Buffer Layers
- 1 January 2001
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 2001
- Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bondingJournal of Crystal Growth, 2001
- Optoelectronic device performance on reduced threading dislocation density GaAs/SiJournal of Applied Physics, 2001
- Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishingApplied Physics Letters, 1998
- Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu mIEEE Journal of Quantum Electronics, 1993
- GaAs on Si and related systems: Problems and prospectsJournal of Crystal Growth, 1989
- Autodoping Effects in Silicon EpitaxyJournal of the Electrochemical Society, 1980
- Autodoping effects of Ge in vapor-grown GaAsl-xPx layers on the Ge substratesSolid-State Electronics, 1973