Autodoping effects of Ge in vapor-grown GaAsl-xPx layers on the Ge substrates
- 31 August 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (8) , 913-920
- https://doi.org/10.1016/0038-1101(73)90098-1
Abstract
No abstract availableKeywords
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