Total dose radiation characteristics of SOI MOSFETs fabricated using ISLANDS technology
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1650-1652
- https://doi.org/10.1109/23.25514
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Porous silicon techniques for SOI structuresIEEE Circuits and Devices Magazine, 1987
- SOI technology using buried layers of oxidized porous SiIEEE Circuits and Devices Magazine, 1987
- The "ISLANDS" method—A manufacturable porous silicon SOI technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-InsulatorIEEE Transactions on Nuclear Science, 1986
- Effects of ionizing radiation on SOI/CMOS Devices fabricated in zone-melting-recrystallized Si films on SiO2IEEE Electron Device Letters, 1984
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Total Dose Radiation-Bias Effects in Laser-Recrystallized SOI MOSFET'sIEEE Transactions on Nuclear Science, 1982