Synthesis of Al(N3)3 and the Deposition of AlN Thin Films
- 1 February 1997
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 101 (9) , 1602-1608
- https://doi.org/10.1021/jp9625873
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursorsJournal of Vacuum Science & Technology A, 1996
- Gas Phase Synthesis, Structure, and Dissociation of Boron TriazideThe Journal of Physical Chemistry, 1995
- Infrared study of aluminum nitride films prepared by ion beam deposition. 1. Effects of film thickness, aging, and moistureLangmuir, 1990
- Infrared and tunneling spectroscopy study of aluminum nitride films prepared by ion-beam depositionThe Journal of Physical Chemistry, 1990
- Organometallic azides as precursors for aluminum nitride thin filmsChemistry of Materials, 1989
- OMVPE of GaN and AIN films by metal alkyls and hydrazineJournal of Crystal Growth, 1986
- Infrared matrix isolation spectroscopy of trimethylgallium, trimethylaluminium and triethylaluminiumSpectrochimica Acta Part A: Molecular Spectroscopy, 1984
- The monomer−dimer equilibria of liquid aliminum alkylsJournal of Organometallic Chemistry, 1972
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Lattice Vibration Spectra of Aluminum NitridePhysical Review B, 1967