Simulation of Rapid Thermal Processing Equipment and Processes
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Finite element/Newton method for the analysis of Czochralski crystal growth with diffuse‐grey radiative heat transferInternational Journal for Numerical Methods in Engineering, 1990
- Transport phenomena in vertical reactors for metalorganic vapor phase epitaxyJournal of Crystal Growth, 1990
- Flow and heat transfer in CVD reactors: Comparison of Raman temperature measurements and finite element model predictionsJournal of Crystal Growth, 1990
- Transport phenomena and chemical reaction issues in OMVPE of compound semiconductorsJournal of Crystal Growth, 1989
- High-quality homoepitaxial silicon films deposited by rapid thermal chemical vapor depositionJournal of Applied Physics, 1989
- Chemical Vapor Deposition of Polycrystalline Silicon in a Rapid Thermal ProcessorMRS Proceedings, 1989
- Process and Equipment Issues in Rapid Thermal Oxidation (RTO)MRS Proceedings, 1987
- Kinetics of Rapid Thermal Oxidation of SiliconMRS Proceedings, 1987
- An Overview and Comparison of Rapid Thermal Processing Equipment: a Users ViewpointMRS Proceedings, 1985
- Frontal solution program for unsymmetric matricesInternational Journal for Numerical Methods in Engineering, 1976