Large optical cavity AlGaAs injection lasers with multiple active regions
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4038-4041
- https://doi.org/10.1063/1.328228
Abstract
A new type of AlGaAs injection laser is described. The structure consists of alternating p‐ and n‐type layers of GaAs and Alx Ga1−xAs . The electrical mode of operation of the device is that of a Shockley diode (SCR). Optically the device operates as a large optical cavity. Single transverse mode operation was observed with optical cavities larger than 4 μm.This publication has 4 references indexed in Scilit:
- Barrier-controlled low-threshold p n p n GaAs heterostructure laserApplied Physics Letters, 1977
- Electromagnetic propagation in periodic stratified media I General theory*Journal of the Optical Society of America, 1977
- The GaAs P-N-P-N laser diodeIEEE Journal of Quantum Electronics, 1974
- Multilayer GaAs injection laserIEEE Journal of Quantum Electronics, 1968