Operation of a single quantum well heterojunction field-effect photodetector
- 14 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (16) , 1987-1989
- https://doi.org/10.1063/1.106158
Abstract
The single quantum well heterojunction field‐effect photodetector is demonstrated for the first time as a GHz bandwidth waveguide heterostructure, and as the optoelectronic counterpart to the single quantum well heterojunction field‐effect transistor. For a 1 μm gate‐length device a responsivity of 0.16 A/W, external quantum efficiency of 0.35, and test‐laser limited rise time of 100 ps are obtained.Keywords
This publication has 7 references indexed in Scilit:
- Demonstration of the heterostructure field-effect transistor as an optical modulatorApplied Physics Letters, 1991
- Laser micromachining of efficient fiber microlensesApplied Optics, 1990
- Optical neural networksProceedings of the IEEE, 1989
- High-speed integrated heterojunction field-effect transistor photodetector: A gated photodetectorApplied Physics Letters, 1987
- Recent progress in optoelectric integrated circuits (OEIC's)IEEE Journal of Quantum Electronics, 1986
- Ultrahigh speed modulation-doped heterostructure field-effect photodetectorsApplied Physics Letters, 1983
- GaAs m.e.s.f.e.t.: a high-speed optical detectorElectronics Letters, 1977