Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3R)
- https://doi.org/10.1143/jjap.30.464
Abstract
We report on the first growth of a GaAs/Al0.2Ga0.8As heterojunction bipolar transistor by gas source MBE using only gaseous sources. The p-type GaAs base layer was carbon doped using trimethylgallium (p=4×1019 cm-3) and the n-type Al0.2Ga0.8As emitter layer was silicon doped (n=9×1017 cm-3) using uncracked disilane. A dc current gain of 40 was obtained at a current density of 50 A/cm2.Keywords
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