Annealing study of a bistable defect in proton-implanted n-type 4H-SiC
- 31 December 2003
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 340-342, 743-747
- https://doi.org/10.1016/j.physb.2003.09.151
Abstract
No abstract availableKeywords
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