Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation
- 1 February 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (2) , L87
- https://doi.org/10.1143/jjap.20.l87
Abstract
Generation and development of dark line and dark spot defects (DLD/DSDs), and related increases in room temperature pulse threshold current are investigated on InGaAsP/InP double heterostructure (DH) lasers under 10 kA/cm2 forward current density and (250±25)°C junction temperature operation. The average development speed of DLDs is estimated to be about 0.3 µm/h. Temperature rise is confirmed at DSDs with an infrared thermometer. These dark defects have geometrical correlation with etch pit features in the InGaAsP/InP heteroboundary. They are considered to be developed by carrier injection.Keywords
This publication has 6 references indexed in Scilit:
- Transmission Electron Microscope Observation of Mechanically Damaged InGaAsP/InP Double-Heterostructure Light-Emitting DiodeJapanese Journal of Applied Physics, 1980
- Low temperature liquid phase epitaxy growth for room-temperature cw operation of 1.55-μm InGaAsP/InP double-heterostructure laserApplied Physics Letters, 1980
- Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperatureApplied Physics Letters, 1980
- 10 000-h continuous CW operation of In1-xGaxAsyP1-yInP DH lasers at room temperatureIEEE Journal of Quantum Electronics, 1979
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure LasersJapanese Journal of Applied Physics, 1975
- Degradation of CW GaAs double-heterojunction lasers at 300 KProceedings of the IEEE, 1973