Modeling of CrSi/sub 2/-Si and MoSi/sub 2/-Si Schottky barrier contacts
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (6) , 1187-1189
- https://doi.org/10.1109/16.387256
Abstract
No abstract availableKeywords
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