Channel length and width effects on NMOS transistor degradation under constant positive gate-voltage stressing
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- MOSFET degradation due to stressing of thin oxideIEEE Transactions on Electron Devices, 1984
- Threshold-voltage instability of n-channel MOSFET's under bias-temperature agingIEEE Transactions on Electron Devices, 1982