Donor-related deep level in bulk GaSb

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Abstract
Deep level transient spectroscopy (DLTS) and thermally stimulated capacitance (TSCAP) studies on bulk grown tellurium- selenium-, and sulphur-doped gallium antimonide reveal the presence of deep level intrinsic of the dopant species. The trap densities in Te- and Se-doped samples were found to be at least two orders of magnitude lower than the shallow donor concentration. Interestingly, the DLTS spectrum of S:GaSb exhibits DX-like nature with the trap concentration comparable to that of shallow donor concentration. However, the Te and Se related levels do not exhibit DX-like nature. The DLTS and TSCAP results are in good agreement with each other.
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