DX-like centre in bulk GaSb:S

This publication has 15 references indexed in Scilit:

• Ohmic Contacts of AuGeNi and Ag/AuGeNi to n-GaSb with Various Sintering Temperatures
  Japanese Journal of Applied Physics, 1991
• Deep donors in GaSb grown by molecular beam epitaxy
  Applied Physics Letters, 1990
• A detailed Hall-effect analysis of sulfur-doped gallium antimonide grown by molecular-beam epitaxy
  Journal of Applied Physics, 1990
• Low Temperature Electron Irradiation Induced Defects in N-GaSb
  Materials Science Forum, 1986
• Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
  Japanese Journal of Applied Physics, 1985
• Room-temperature electron trapping in Al0.35Ga0.65As/GaAs modulation-doped field-effect transistors
  Applied Physics Letters, 1985
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979
• On the physical nature of the long-period conductivity relaxations in GaSb
  Solid State Communications, 1973
• Conduction-Band Structure of GaSb from Pressure Experiments to 50 kbar
  Physical Review B, 1968
• Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition
  Physical Review B, 1968