Ohmic Contacts of AuGeNi and Ag/AuGeNi to n-GaSb with Various Sintering Temperatures
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5R) , 914-916
- https://doi.org/10.1143/jjap.30.914
Abstract
The ohmic contact properties of Ag/AuGeNi/n-GaSb and AuGeNi/n-GaSb systems were investigated in this paper by measuring the barrier height and specific contact resistance with various sintering temperatures. The lowest specific contact resistance was about 8×10-3-8×10-4 Ω·cm2 for the Ag/AuGeNi/n-GaSb contact system when the sintering temperature was 400°C for 2 min. This is better than that of the AuGeNi/n-GaSb contact system. Rutherford backscattering spectroscopy (RBS) was also used to study the interface between Ag/AuGeNi and GaSb during heat treatment. The Au peak in RBS spectra disappeared and the spectra became smooth when the ohmic contact was formed.Keywords
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