Film deposition temperature dependence of electron mobility for accumulation-mode InP metal-insulator-semiconductor field-effect transistors

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Abstract
The effects of substrate temperature during film deposition on semi‐insulating InP metal‐insulator‐semiconductor field‐effect transistor characteristics are reported. The substrate temperature during film deposition, Ts, has a large influence on elastic and inelastic electron scattering times. With decreasing Ts, effective mobilities measured at room temperature and at 77 K increase, and the temperature dependence of effective mobility is more clearly observed. Electron scattering by neutral impurities is calculated in order to estimate the number of scattering centers near the InP surface, and to determine the activation energy (Ea=0.3±0.1 eV) of phosphorus migration (i.e., P hopping). Hikami–Larkin–Nagaoka’s theory [Prog. Theor. Phys. 6 3, 707 (1980)] is applied to negative‐magnetoresistance data measured at low temperature and in the low induced electron density region to estimate the electron inelastic scattering times. The substrate temperature dependence of inelastic scattering time is discussed in terms of Anderson localization.