Time-resolved study of laser-induced disorder of Si surfaces
- 4 April 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (14) , 1438-1441
- https://doi.org/10.1103/physrevlett.60.1438
Abstract
Optical second-harmonic studies show that the electronic structure in the top 75–130 Å of a crystalline Si surface loses cubic order only 150 fsec after the Si is excited by an intense 100-fsec optical pulse. This suggests that atomic disorder can be induced directly by electronic excitation, before the material becomes vibrationally excited. In contrast, the electronic properties of the equilibrium molten phase are not obtained for several hundreds of femtoseconds.Keywords
This publication has 12 references indexed in Scilit:
- Time-resolved picosecond optical measurements of laser-excited graphitePhysical Review Letters, 1986
- Ultrafast heating of silicon on sapphire by femtosecond optical pulsesPhysical Review Letters, 1986
- Time-resolved ellipsometry measurements of the optical properties of silicon during pulsed excimer laser irradiationApplied Physics Letters, 1985
- Surface Studies by Optical Second-Harmonic Generation: The Adsorption of, CO, and Sodium on the Rh(111) SurfacePhysical Review Letters, 1984
- Optical heating of electron-hole plasma in silicon by picosecond pulsesApplied Physics Letters, 1984
- Second-Harmonic Reflection from Silicon Surfaces and Its Relation to Structural SymmetryPhysical Review Letters, 1983
- Femtosecond-Time-Resolved Surface Structural Dynamics of Optically Excited SiliconPhysical Review Letters, 1983
- Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in SiliconPhysical Review Letters, 1983
- Picosecond time-resolved plasma and temperature-induced changes of reflectivity and transmission in siliconApplied Physics Letters, 1982
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979