Growth, characterization and modeling of InxGa1−xP stripes by selective-area MOCVD
- 1 September 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (9) , 1514-1520
- https://doi.org/10.1007/bf02655392
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Microstructures of (In,Ga)P alloys grown on GaAs by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1995
- Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxyIEEE Photonics Technology Letters, 1994
- Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodesIEEE Journal of Quantum Electronics, 1994
- Characterization of two resistive anode encoder position sensitive detectors for use in ion microscopyReview of Scientific Instruments, 1993
- Analytical models for the growth by metal organic vapour phase epitaxy: III. ApplicationsSemiconductor Science and Technology, 1990
- Chemical boundary layers in MOCVD: The return of the stagnant layerJournal of Crystal Growth, 1988
- A Boundary Layer Model for the MOCVD Process in a Vertical Cylinder ReactorJapanese Journal of Applied Physics, 1987