Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy
- 1 September 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (9) , 1073-1075
- https://doi.org/10.1109/68.324672
Abstract
Strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Threshold currents of 2.65 mA for an uncoated device and 0.97 mA for a coated device have been obtained. A peak optical output power of 170 mW per uncoated facet for a device with a 4 /spl mu/m active region width was also achieved. Peak emissions wavelengths range from 0.956 to 1.032 /spl mu/m.Keywords
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