Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD

Abstract
Selective-area epitaxy is used to fabricate a twelve-channel strained layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array suitable for wavelength division multiplexing applications. The measured wavelength separation between elements is 1.9 nm, in good agreement with the 2 nm design value.