Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (7) , 786-788
- https://doi.org/10.1109/68.311454
Abstract
Selective-area epitaxy is used to fabricate a twelve-channel strained layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array suitable for wavelength division multiplexing applications. The measured wavelength separation between elements is 1.9 nm, in good agreement with the 2 nm design value.Keywords
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