On the Forward Conduction Mechanisms in SiC P-N Junctions
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor depositionIEEE Electron Device Letters, 1993
- Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/IEEE Transactions on Electron Devices, 1992
- Epitaxial Thin Film Growth and Device Development in Monocrystalline Alpha and Beta Silicon CarbideMRS Proceedings, 1989
- Electrical properties of ion-implanted p-n junction diodes in β-SiCJournal of Applied Physics, 1988
- Physical and Chemical Nature of Films Formed on Si(100) Surfaces Subjected to C 2 H 4 at Elevated TemperaturesJournal of the Electrochemical Society, 1987
- Electrical properties of n-amorphous/p-crystalline silicon heterojunctionsJournal of Applied Physics, 1984
- Polytypic transformations in silicon carbideProgress in Crystal Growth and Characterization, 1983
- Physics of Semiconductor DevicesPhysics Today, 1970
- Zener tunneling in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938