Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (1) , 64-74
- https://doi.org/10.1109/16.108213
Abstract
No abstract availableKeywords
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