The “Buffer” Layer in the Cvd Growth of β-SiC on (001) Silicon
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The concept of a “buffer” layer in the epitaxial growth of compound semiconductors on (001) silicon substrate is discussed on the basis of homogeneous and heterogeneous surface nucleation. Experimental results on the nucleation of β-SiC on (001) Si by Chemical Vapor Deposition (CVD) are presented and they are discussed in terms of the model for the growth of the buffer layer.Keywords
This publication has 6 references indexed in Scilit:
- Mechanisms of Epitaxial Growth of Polar Semiconductors on (001) SiliconSpringer Proceedings in Physics, 1989
- Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor depositionJournal of Applied Physics, 1988
- Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation.MRS Proceedings, 1988
- MOCVD growth and characterization of GaP on SiJournal of Crystal Growth, 1986
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983