Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (3) , 136-139
- https://doi.org/10.1109/55.215136
Abstract
The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n junction diodes are reported. These diodes, which were grown on commercially available 6H-SiC ( alpha -SiC) substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.Keywords
This publication has 29 references indexed in Scilit:
- Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC WafersSpringer Proceedings in Physics, 1992
- Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical StudiesSpringer Proceedings in Physics, 1992
- High-voltage 6H-SiC p-n junction diodesApplied Physics Letters, 1991
- Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafersApplied Physics Letters, 1991
- Application of oxidation to the structural characterization of SiC epitaxial filmsApplied Physics Letters, 1991
- Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin filmsJournal of Applied Physics, 1988
- Epitaxial growth and electric characteristics of cubic SiC on siliconJournal of Applied Physics, 1987
- Theoretical and Empirical Studies of Impurity Incorporation into β ‐ SiC Thin Films during Epitaxial GrowthJournal of the Electrochemical Society, 1986
- Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor depositionApplied Physics Letters, 1986
- 3C-SiC p-n junction diodesApplied Physics Letters, 1986