AsH3 preflow effects on initial stages of GaAs grown on Si by metalorganic chemical vapor deposition
- 23 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (26) , 3458-3460
- https://doi.org/10.1063/1.105677
Abstract
The effect of AsH3 preflow on initial stages of GaAs grown on Si was studied by transmission electron microscopy. As the temperature of AsH3 preflow was increased, the surface of the Si substrate became rougher: At 1000 °C, many threading dislocations originating at the rough surface were observed in the GaAs layer. In contrast, at low temperature, 450 °C, the Si surface became smooth and the dislocations were reduced. Furthermore, the Si surface was still smooth after long AsH3 preflow at 450 °C. The roughness of the Si surface is attributed to the supply of As atoms to the Si surface at high temperature.Keywords
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