Ohmic Contacts to n-Type GaAs Using RTA
- 16 April 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 112 (2) , K105-K109
- https://doi.org/10.1002/pssa.2211120266
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Short-Pulsed Alloying of Contacts on GaAsPhysica Status Solidi (a), 1985
- Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAsElectronics Letters, 1984
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- Alloying behaviour of Au-Ge/Pt ohmic contacts to GaAs by pulsed electron beam and furnace heatingElectronics Letters, 1980
- Specific contact resistance using a circular transmission line modelSolid-State Electronics, 1980
- Alloying behavior of Ni/Au-Ge films on GaAsJournal of Applied Physics, 1980
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975