State and prospects of investigations of chalcogenide vitreous semiconductors
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 973-981
- https://doi.org/10.1016/0022-3093(83)90331-9
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- A new comparison of photoluminescence in crystalline and amorphous arsenic triselenide (As2Se3)Philosophical Magazine Part B, 1983
- Excitation-energy dependence of the photoluminescence total-light decay in arsenic chalcogenidesPhilosophical Magazine Part B, 1983
- Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBixJournal of Non-Crystalline Solids, 1983
- Modification of vitreous As2Se3Solar Energy Materials, 1982
- Picosecond luminescence and competing nonradiative processes inAs2S3glassPhysical Review B, 1982
- Photoluminescence Decay in Amorphous As2S3Japanese Journal of Applied Physics, 1982
- Transient photoconductivity and photo-induced optical absorption in amorphous semiconductorsPhilosophical Magazine Part B, 1982
- Structural model of two-level glass statesPhysical Review B, 1981
- Photoinduced Defects in Chalcogenide GlassesPhysical Review Letters, 1980
- Preparation of n-type semiconducting Ge20Bi10Se70 glassApplied Physics Letters, 1979