Growth of bismuth films on GaAs(110) studied using low-energy electron diffraction

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Abstract
The growth of bismuth films on GaAs(110) has been studied with use of low-energy electron diffraction. The overlayer forms epitaxially in the first monolayer, two dimensionally disordered in the second, and three dimensionally at higher coverages. Below 1 monolayer an attractive interchain force directed perpendicular to the chain direction governs island formation. A (6×1) reconstruction at 1 monolayer confirms that the 24-Å average chain length revealed previously by scanning tunneling microscopy is part of the long-range surface order and is not indicative of an incommensurate overlayer.