Formation of shallow P+N junctions by dual implantation
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4) , 493-495
- https://doi.org/10.1016/0168-583x(87)90887-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Formation of Shallow p+n Junctions by B-Ion Implantation in Si substrates with Amorphous LayersJapanese Journal of Applied Physics, 1985
- Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted siliconApplied Physics Letters, 1984
- Dual ion implantation technique for formation of shallow p+/n junctions in siliconJournal of Applied Physics, 1983
- Electrical properties of Si heavily implanted with boron molecular ionsJournal of Applied Physics, 1982
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979