InP-based heterojunction bipolar transistors: performance status and circuit applications

1 January 1990

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Abstract

The present status and prospects of heterojunction bipolar transistors configured with InP, InGaAs and/or InAlAs on InP substrates are reviewed. The importance of ultrahigh electron velocity is highlighted. Self-aligned fabrication techniques are described, and devices with wide bandgap collectors for microwave power applications and with low turn-on voltage for digital applications are presented. Applications are discussed. Frequency dividers configured with these devices have operated to 17 GHz.

Keywords

This publication has 6 references indexed in Scilit:

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
IEEE Electron Device Letters, 1990
Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits
IEEE Electron Device Letters, 1989
A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's
IEEE Electron Device Letters, 1989
Subpicosecond InP/InGaAs heterostructure bipolar transistors
IEEE Electron Device Letters, 1989
High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors
IEEE Electron Device Letters, 1988
AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performance
Electronics Letters, 1986