Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11R)
- https://doi.org/10.1143/jjap.29.2680
Abstract
A microbeam line for MeV heavy ions of almost any element has been developed for microion-beam processing such as maskless MeV ion implantation and its in-situ analysis. Beam spot sizes of 4.0 µm × 4.0 µm for 3 MeV C2+ and 9.6 µm × 4.8 µm for 1.8 MeV Au2+ beams were obtained. Maskless MeV gold ion implantation to a silicon substrate and in-situ microanalysis before and after ion implantation were demonstrated.Keywords
This publication has 6 references indexed in Scilit:
- Focused High-Energy Heavy Ion BeamsJapanese Journal of Applied Physics, 1990
- muprobe using focused 1.5 MeV helium ion and proton beamsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Microanalysis by Focused MeV Helium Ion BeamJapanese Journal of Applied Physics, 1987
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+ Ion ImplantationJapanese Journal of Applied Physics, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980