Microanalysis by Focused MeV Helium Ion Beam
- 1 May 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (5A) , L550-553
- https://doi.org/10.1143/jjap.26.l550
Abstract
A microbeam line with 1.5 MeV helium ions for Rutherford backscattering (RBS) and particle-induced X-ray emission (PIXE) measurements has been realized by piezo-driven objective slits and a magnetic quadrupole doublet. A minimum beam spot size of 1.3 µm×2.2 µm was obtained. Secondary electron and Rutherford backscattering mapping images were demonstrated.Keywords
This publication has 10 references indexed in Scilit:
- 200 kV Mass-Separated Fine Focused Ion Beam ApparatusJapanese Journal of Applied Physics, 1985
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl4 Gas AtmosphereJapanese Journal of Applied Physics, 1984
- Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion BeamsJapanese Journal of Applied Physics, 1984
- High energy ion microprobesNuclear Instruments and Methods in Physics Research, 1983
- Real and parasitic aberrations of quadrupole probe-forming systemsNuclear Instruments and Methods in Physics Research, 1982
- The Heidelberg proton microprobeNuclear Instruments and Methods in Physics Research, 1982
- Fabrication of 80 nm-Wide Lines in FPM Resist by H+ Beam ExposureJapanese Journal of Applied Physics, 1981
- A shutter-controlled microbeam combined with scanning system for two-dimensional backscattering imagesNuclear Instruments and Methods, 1978
- Lattice Site Location of Cadmium and Tellurium Implanted in Gallium ArsenideJapanese Journal of Applied Physics, 1975
- Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium ArsenideJapanese Journal of Applied Physics, 1973