Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes
- 1 February 2001
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 18 (2) , 283-285
- https://doi.org/10.1088/0256-307x/18/2/344
Abstract
Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes were investigated. Measurement of the forward bias current-voltage behaviour of the device demonstrated a departure from the Shockley model of a p-n diode, and it was observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunnelling. Electroluminescence experiments indicated that there was a main emission band around 2.80 eV and a relatively weaker peak at 3.2 eV. A significant blueshift of the optical emission band was observed, which was consistent with the tunnelling character of electrical characteristics. Furthermore, the degradation in I-V characteristics and the low resistance ohmic short of the device were observed.Keywords
This publication has 15 references indexed in Scilit:
- High Efficient Green Emission from Organic Multi-quantum Wells StructureChinese Physics Letters, 1999
- Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodesApplied Physics Letters, 1996
- InGaN/AlGaN blue-light-emitting diodesJournal of Vacuum Science & Technology A, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodesJournal of Applied Physics, 1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- In situ monitoring and Hall measurements of GaN grown with GaN buffer layersJournal of Applied Physics, 1992