A global model for rapid thermal processors
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 3 (4) , 183-188
- https://doi.org/10.1109/66.61967
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Temperature uniformity in RTP furnacesIEEE Transactions on Electron Devices, 1992
- Sample geometry effects in rapid thermal annealingJournal of Vacuum Science & Technology B, 1990
- Rapid Thermal Oxidation of SiliconJournal of the Electrochemical Society, 1986
- Formation of thin silicon oxide films by rapid thermal heatingJournal of Applied Physics, 1986
- The Effect of Thin Dielectric Films on the Accuracy of Pyrometric Temperature MeasurementMRS Proceedings, 1985
- Process Control for a Rapid Optical Annealing SystemMRS Proceedings, 1985
- Temperature Measurement and Control in a Rapid Thermal ProcessorMRS Proceedings, 1985