Formation of thin silicon oxide films by rapid thermal heating
- 1 June 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (11) , 3921-3923
- https://doi.org/10.1063/1.337040
Abstract
Rapid thermal heating of silicon samples in a dry O2 ambient has been used to form thin SiO2 films. Compared to conventional furnace oxidation, an increased growth rate was observed which is linearly dependent on the square root of time. Activation energies of 1.99 and 2.26 eV for 〈111〉 and 〈100〉 orientation, respectively, have been determined in the range 1000–1200 °C.This publication has 4 references indexed in Scilit:
- Thermal Oxidation of Silicon in Dry Oxygen: Accurate Determination of the Kinetic Rate ConstantsJournal of the Electrochemical Society, 1985
- Rapid thermal processing of thin gate dielectrics. Oxidation of siliconIEEE Electron Device Letters, 1985
- Activation Energy for the Parabolic Rate Constant during Sequential Si OxidationJournal of the Electrochemical Society, 1985
- Optically enhanced oxidation of semiconductorsJournal of Vacuum Science and Technology, 1981