Novel mechanism of a real-space transfer oscillator
- 25 March 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (12) , 1277-1279
- https://doi.org/10.1063/1.104335
Abstract
A new mechanism for self-generated current oscillations in modulation-doped semiconductor heterostructures under parallel conduction is proposed. It is based upon the nonlinear dynamics of real-space electron transfer and delayed dielectric relaxation of the interface potential barrier resulting from the space charge in the doped AlGaAs layer. From our simulations we predict current oscillations in the 20–80 GHz range under dc bias.Keywords
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