TiN as a diffusion barrier between CoSi2 or PtSi and aluminum
- 1 June 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (1-2) , 89-99
- https://doi.org/10.1016/0040-6090(83)90551-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- High-temperature contact structures for silicon semiconductor devicesApplied Physics Letters, 1980
- Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and InterconnectsIEEE Journal of Solid-State Circuits, 1980
- Investigation of titanium—nitride layers for solar-cell contactsIEEE Transactions on Electron Devices, 1980
- Aluminum-silicide reactions. II. Schottky-barrier heightJournal of Applied Physics, 1979
- Aluminum-silicide reactions. I. Diffusion, compound formation, and microstructureJournal of Applied Physics, 1979
- TiN as a diffusion barrier in the Ti-Pt-Au beam-lead metal systemThin Solid Films, 1979
- Thin-film interaction in aluminum and platinumJournal of Applied Physics, 1976
- X-ray study of interdiffusion in bimetallic Cu–Au filmsJournal of Applied Physics, 1972
- Electron diffraction data on new compounds in the system platinum–aluminumActa Crystallographica, 1964
- The structure of Co4Al13Acta Crystallographica, 1962