Solid phase epitaxy of a Ge-Si alloy on [111] Si through a Pd2Si layer
- 21 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8) , 747-748
- https://doi.org/10.1063/1.101794
Abstract
Solid phase epitaxy of a Ge70Si30 alloy on [111]Si substrates was achieved in the amorphous Ge/Pd2Si/[111]Si system. Upon annealing at temperatures above 600 °C,the Ge transported through the silicide layer and formed a Ge‐rich, Si‐Ge epitaxial layer on top of the Si substrate. At the same time the Pd silicide layer exchanged positions with the Ge, leading to the final configuration of Pd2Si/Si‐Ge/[111]Si. The crystallinity of Pd2Si had a major effect on the epitaxy of the Ge‐Si alloy. On [100]Si where the Pd2Si was polycrystalline, epitaxial Ge‐Si growth was not observed.Keywords
This publication has 4 references indexed in Scilit:
- Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of GeJournal of Applied Physics, 1987
- Growth of GeSi/Si strained-layer superlattices using limited reaction processingJournal of Applied Physics, 1987
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Dissociation mechanism for solid-phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) systemApplied Physics Letters, 1976