Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 511-515
- https://doi.org/10.1016/s0022-0248(98)00341-8
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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