InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxyApplied Physics Letters, 1991
- Growth and characterization of low temperature AlInAsJournal of Crystal Growth, 1991
- Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °CApplied Physics Letters, 1991
- Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBEIEEE Electron Device Letters, 1990
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like bandPhysical Review B, 1990
- A novel method for the growth of good quality GaAs at extremely low substrate temperatures (as low as 120 °C)Journal of Vacuum Science & Technology B, 1990
- Investigation of low growth temperature AlGaAs and GaAs using metal–insulator–semiconductor diagnostic structuresJournal of Vacuum Science & Technology B, 1990
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Molecular-beam epitaxial growth of InP homoepitaxial layers and their electrical and optical propertiesJournal of Applied Physics, 1981