Growth and characterization of low temperature AlInAs
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 445-449
- https://doi.org/10.1016/0022-0248(91)91017-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1989
- The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy qualityJournal of Applied Physics, 1988
- The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performanceJournal of Vacuum Science & Technology B, 1988
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988