An excellent weight-updating-linearity synapse memory cell for self-learning neuron MOS neural networks
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Characteristics of floating gate device as analogue memory for neural networksElectronics Letters, 1991
- Optimum design of dual-control gate cell for high-density EEPROM'sIEEE Transactions on Electron Devices, 1985