Picosecond GaAs and InGaAs photoconductive switches obtained by low-temperature metal-organic chemical vapour deposition
- 1 June 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (6) , 845-849
- https://doi.org/10.1088/0268-1242/7/6/018
Abstract
High-resistivity GaAs and InGaAs layers have been obtained by the MOCVD growth technique at low temperatures for the first time. The structural and physical properties of the LT-MOCVD grown GaAs layers were similar to those of annealed LT-MBE GaAs layers-they were of a high crystalline quality with mobilities reaching 2600 cm2 V-1 s-1 and had short carrier lifetimes of 50 ps. The resistivity of the LT-grown InGaAs layers was close to its intrinsic limits. Photoconductive switches with carrier lifetimes of 20 to 40 ps, long-wavelength cutoff of 1.7 mu m, breakdown voltage of 10 V for a 5 mu m gap and sensitivity reaching 0.05 A W-1 were fabricated from those layers.Keywords
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