Surface analysis of cubic silicon carbide (001)
- 1 February 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 243 (1-3) , 96-112
- https://doi.org/10.1016/0039-6028(91)90348-v
Abstract
No abstract availableKeywords
This publication has 46 references indexed in Scilit:
- Summary Abstract: Surface structures of β‐SiC and pseudomorphic Si adlayersJournal of Vacuum Science & Technology A, 1988
- Effects of initial surface composition on the interface chemistry of gold on cubic SiC(100)Journal of Vacuum Science & Technology A, 1988
- Photoemission from supported metal clusters: The problem of the supportPhysical Review B, 1987
- Surface composition of SiC after ion bombardment, annealing, and exposure to oxygenJournal of Vacuum Science & Technology A, 1986
- Surface states and reconstruction on Ge(001)Physical Review B, 1985
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Surface studies of epitaxial β-SiC on Si(100)Journal of Applied Physics, 1984
- XPS, AES and friction studies of single-crystal silicon carbideApplications of Surface Science, 1982
- Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfacesPhysical Review B, 1974
- Some Surface Properties of Silicon-Carbide CrystalsJournal of Applied Physics, 1959