Characteristics of erbium implants in silicon-on-insulator
- 1 September 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (5) , 2530-2532
- https://doi.org/10.1063/1.346474
Abstract
The characteristics of erbium implants in a silicon‐on‐insulator structure were studied by photoluminescence and electrical activation measurements. The results indicate that a correlation exists between the luminescence energy or the lattice configuration and the electrical activation of the erbium in the implanted materials. Meanwhile, this work suggests a new way to enhance the luminescence efficiency of the erbium implanted materials.This publication has 10 references indexed in Scilit:
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