Cadmium arsenide films prepared by pulsed laser evaporation: electrical proerties and lattice parameters
- 1 February 1987
- journal article
- research article
- Published by Elsevier in Thin Solid Films
- Vol. 147 (1) , L51-L54
- https://doi.org/10.1016/0040-6090(87)90047-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Growth and properties of Cd3As2 films prepared by pulsed-laser evaporationCanadian Journal of Physics, 1985
- Growth of polycrystalline Cd3As2 films on room temperature substrates by a pulsed-laser evaporation techniqueThin Solid Films, 1984
- Pulsed laser evaporation of Cd3As2Applied Physics Letters, 1984
- Spherical and plane multilayer normal incidence mirrors for soft x-raysOptics Communications, 1983
- Highly oriented ZnO films grown by laser evaporationJournal of Vacuum Science & Technology A, 1983
- Growth of HgCdTe films by laser induced evaporation and depositionJournal of Vacuum Science and Technology, 1982
- Dynamics of laser-induced vaporization for ultrafast deposition of amorphous silicon filmsApplied Physics Letters, 1981
- Nucleation processes of Cd3As2 films on sodium chloride substratesJournal of Crystal Growth, 1980