In-Situ Ellipsometry and Light Scattering Studies of Substrate Cleaning and Initial Layer Deposition in Low Temperature CVD of Crystalline Si
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The first in-situ observations of initial stages of growth during Si vapour-phase homoepitaxy are reported, using the simultaneous measurement of dual-wavelength ellipsometry (364/488nm) and diffuse light scattering (488nm). Effective medium modelling shows that initial growth is nonuniform with pits present in the first 50–200Å of growth which rapidly fill in as growth proceeds. The sizes of the ellipsometric and scattering discontinuities are dependent on the extent of pre-growth roughening associated with oxide removal and finite wavelength effects become important for growth on roughened substrates.Keywords
This publication has 12 references indexed in Scilit:
- In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBEJournal of Crystal Growth, 1987
- I n s i t u spectroscopic ellipsometry study of the growth of microcrystalline siliconJournal of Applied Physics, 1986
- I n s i t u investigation of the nucleation of microcrystalline SiApplied Physics Letters, 1986
- International PatentsNature Biotechnology, 1984
- Optical functions of silicon between 1.7 and 4.7 eV at elevated temperaturesPhysical Review B, 1983
- Finite-wavelength effects in composite mediaPhysical Review B, 1982
- Bounds on allowed values of the effective dielectric function of two-component composites at finite frequenciesPhysical Review B, 1982
- In situ observation of polysilicon nucleation and growthJournal of Crystal Growth, 1982
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980
- Precision Bounds to Ellipsometer SystemsApplied Optics, 1975