I n s i t u investigation of the nucleation of microcrystalline Si
- 31 March 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (13) , 843-845
- https://doi.org/10.1063/1.96686
Abstract
I n situ ellipsometry experiments have been used to probe the structural changes that occur in the initial stages of the growth of microcrystalline silicon ( μc-Si) on single-crystal Si substrates. The initial nucleation of μc-Si appears to occur at well-dispersed sites and ∼100 Å of material with significantly different optical properties than the bulk is buried at the film/substrate interface. The different optical structure of this interface layer is attributed to voids which are trapped when crystalline nuclei merge. These results are contrasted with recent data for hydrogenated amorphous silicon which show that nuclei converge after about 50 Å, leaving material with bulklike optical properties at the substrate interface.Keywords
This publication has 6 references indexed in Scilit:
- The nucleation and growth of glow-discharge hydrogenated amorphous siliconJournal of Applied Physics, 1986
- An ellipsometry study of a hydrogenated amorphous silicon based n-i structureJournal of Applied Physics, 1985
- Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloysApplied Physics Letters, 1983
- Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasmaApplied Physics Letters, 1983
- Surface analysis during vapour phase growthJournal of Crystal Growth, 1980
- Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometersJournal of the Optical Society of America, 1974