Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys
- 1 December 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11) , 1045-1047
- https://doi.org/10.1063/1.94230
Abstract
The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium.Keywords
This publication has 8 references indexed in Scilit:
- Nucleation and growth rate of a-Si alloysApplied Physics Letters, 1983
- Reactions of atomic hydrogen in the deposition of hydrogenated amorphous silicon by glow discharge and reactive sputteringJournal of Applied Physics, 1982
- Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline siliconPhilosophical Magazine Part B, 1982
- Characterization of plasma-deposited microcrystalline siliconPhilosophical Magazine Part B, 1982
- Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow dischargeSolid State Communications, 1982
- A thermodynamic criterion of the crystalline-to-amorphous transition in siliconPhilosophical Magazine Part B, 1982
- Hydrogen elimination during the glow-discharge deposition of a-Si:H alloysApplied Physics Letters, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980